- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375915 > FS70SM-06 (POWEREX INC) 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor PDF資料下載
參數(shù)資料
| 型號(hào)： | FS70SM-06 |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | 70 A, 60 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | FS70SM-06 |
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS70SM-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
0
50
100
150
200
250
0
200
50
100
150
10
0
3
5
7
10
1
2
3
5
7
10
2
2
3
2
3
5
7
10
0
2
10
1
3 5 7
3 5 7
2
10
2
3 5 7
2 3
tw = 10
m
s
T
C
= 25°C
Single Pulse
100
m
s
10ms
1ms
DC
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1.0
V
GS
= 20V 10V
8V
4V
4.5V
5V
6V
T
C
= 25°C
Pulse Test
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V 10V
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
6V
5V
4V
8V
T
C
= 25°C
Pulse Test
P
D
= 150W
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
V
μ
A
mA
V
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
ns
60
—
—
2.0
—
—
50
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
5.7
0.200
70
6540
1640
790
95
195
290
210
1.0
—
85
—
±
0.1
0.1
4.0
7.5
0.263
—
—
—
—
—
—
—
—
1.5
0.83
—
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
V
DS
= 60V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 35A, V
GS
= 10V
I
D
= 35A, V
GS
= 10V
I
D
= 35A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 30V, I
D
= 35A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 35A, V
GS
= 0V
Channel to case
I
S
= 70A, dis/dt = –100A/
μ
s
PERFORMANCE CURVES
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FS70SM-2 | 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| FS70SM-2 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FS70SMJ-03 | HIGH-SPEED SWITCHING USE |
| FS70SMJ-03 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FS70SMJ-2 | HIGH-SPEED SWITCHING USE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FS70SM-06#B00 | 功能描述:MOSFET N-CH 60V 70A TO-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| FS70SM-06-A8 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS70SM2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | TO-247VAR |
| FS70SM-2 | 制造商:Renesas Electronics Corporation 功能描述:POWER MODULE - Rail/Tube |
| FS70SM-2#B00 | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-3P Bag |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。