參數(shù)資料
型號(hào): FS7SM-14
廠商: Powerex Power Semiconductors
英文描述: Nch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述: N溝道功率MOSFET高速開(kāi)關(guān)使用
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 42K
代理商: FS7SM-14
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30KM-3
HIGH-SPEED SWITCHING USE
0
10
20
30
40
50
0
4
8
12
16
20
T
C
= 25°C
V
DS
= 10V
Pulse Test
0
1
2
3
4
5
0
4
8
12
16
20
T
C
= 25°C
Pulse Test
30A
10A
I
D
= 50A
10
2
3
2
5
7
10
3
2
3
5
7
10
4
2
3
2
5
7
10
0
2
10
1
3 5 7
3 5 7
2
10
2
3 5 7
2 3
T
ch
= 25°C
f = 1MH
Z
V
GS
= 0V
Ciss
Coss
Crss
10
0
10
1
2
3 4 5 7
10
2
2
3 4 5 7
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
t
d(off)
t
r
t
d(on)
t
f
T
ch
= 25°C
V
DD
= 80V
V
GS
= 10V
R
GEN
= R
GS
= 50
0
20
40
60
80
100
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3 5 7
2 3
V
GS
= 10V
20V
T
C
= 25°C
Pulse Test
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
10
0
10
1
2
3 4 5 7
10
2
2
3 4 5 7
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
T
C
= 25°C
75°C
125°C
V
DS
= 10V
Pulse Test
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