參數(shù)資料
型號: FS8S0965RCB
廠商: Fairchild Semiconductor Corporation
英文描述: Fairchild Power Switch(FPS)
中文描述: 飛兆半導(dǎo)體功率開關(guān)(FPS)
文件頁數(shù): 4/20頁
文件大小: 2039K
代理商: FS8S0965RCB
FS8S0965RCB
4
Electrical Characteristics (SenseFET part)
(Ta=25
°
C unless otherwise specified)
Note:
(1) Pulse test : Pulse width
300
μ
S, duty 2%
Parameter
Drain Source Breakdown Voltage
Symbol
BV
DSS
Condition
Min.
650
-
Typ.
-
-
Max.
-
200
Unit
V
μ
A
V
GS
=0V, I
D
=250
μ
A
V
DS
=650V, V
GS
=0V
V
DS
=520V
V
GS
=0V, T
C
=125
°
C
V
GS
=10V, I
D
=1.8A
V
DS
=50V, I
D
=1.8A
Zero Gate Voltage Drain Current
I
DSS
-
-
300
μ
A
Static Drain Source On Resistance
(1)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
1.0
8
1300
135
25
25
75
130
70
1.2
-
-
-
-
-
-
-
-
mho
V
GS
=0V, V
DS
=25V,
f = 1MHz
pF
V
DD
=325V, I
D
=6.5A
(MOSFET switching
time is essentially
independent of
operating temperature)
V
GS
=10V, I
D
=6.5A,
V
DS
=520V (MOSFET
switching time is essentially
independent of operating
temperature)
nS
Qg
-
45
60
nC
Qgs
Qgd
-
-
8
21
-
-
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