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參數(shù)資料
| 型號： | FSAM20SM60A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | SPMTM (Smart Power Module) |
| 中文描述： | AC MOTOR CONTROLLER, 40 A, DMA32 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 2339K |
| 代理商： | FSAM20SM60A |
2003 Fairchild Semiconductor Corporation
F
Rev. E, August 2003
Absolute Maximum Ratings
Thermal Resistance
Note:
2. For the measurement point of case temperature(T
), please refer to Fig. 2.
3. The thickness of thermal grease should not be more than 100um.
Electrical Characteristics
Inverter Part
Item
Collector - Emitter
Saturation Voltage
FWDi Forward Voltage
Switching Times
Note:
4. t
and t
include the propagation delay time of the internal drive IC. t
C(ON)
and t
C(OFF)
are the switching time of IGBT itself under the given gate driving condition
internally. For the detailed information, please see Fig. 4.
Item
Symbol
R
th(j-c)Q
Condition
Min. Typ.
-
Max.
2.1
Unit
°C/W
Junction to Case Thermal
Resistance
Each IGBT under Inverter Operating Condition
Each FWDi under Inverter Operating Condition
-
R
th(j-c)F
-
-
3.3
°C/W
Contact Thermal
Resistance
R
th(c-f)
Ceramic Substrate (per 1 Module)
Thermal Grease Applied (Note 3)
-
-
0.06
°C/W
Symbol
V
CE(SAT)
Condition
Min.
-
Typ.
-
Max.
2.3
Unit
V
V
CC
= V
BS
= 15V
V
IN
= 0V
V
IN
= 5V
V
PN
= 300V, V
CC
= V
BS
= 15V
I
C
= 20A, T
J
= 25°C
V
IN
= 5V
0V, Inductive Load
(High, Low-side)
I
C
= 20A, T
J
= 25°C
V
FM
t
ON
t
C(ON)
t
OFF
t
C(OFF)
t
rr
I
CES
I
C
= 20A, T
J
= 25°C
-
-
-
-
-
-
-
-
2.5
-
-
-
-
-
250
V
us
us
us
us
us
μ
A
(Note 4)
V
CE
= V
CES
, T
J
= 25°C
0.35
0.16
0.88
0.35
0.13
-
Collector - Emitter
Leakage Current
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FSAM30SH60A | 功能描述:IGBT 模塊 600V/30A/ SPM2 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM30SH60A | 制造商:Fairchild Semiconductor Corporation 功能描述:POWER SUPPLY IC 制造商:Fairchild Semiconductor Corporation 功能描述:Power Supply IC |
| FSAM30SH60A_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:SPMTM (Smart Power Module) |
| FSAM30SM60A | 功能描述:IGBT 模塊 600V/30A/ SPM2 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM30SM60SL | 功能描述:IGBT 模塊 600V/30A Smart Power RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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