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FSB50325S Rev. A
F
Electrical Characteristics
(T
J
= 25°C, V
CC
=V
BS
=15V Unless Otherwise Specified)
Inverter Part
(Each FRFET Unless Otherwise Specified)
Symbol
Parameter
Control Part
(Each HVIC Unless Otherwise Specified)
Symbol
Parameter
Note:
1. For the measurement point of case temperature T
C
, please refer to Figure 3 in page 4.
2. BV
is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM. V
PN
should be sufficiently less than this value considering the
effect of the stray inductance so that V
DS
should not exceed BV
DSS
in any case.
3. t
and t
include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the
field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 4 for the switching time definition with the switching test circuit of Figure 5.
4. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 5 for the RBSOA test cir-
cuit that is same as the switching test circuit.
Conditions
Min
Typ Max
Units
BV
DSS
Drain-Source Breakdown
Voltage
V
IN
= 0V, I
D
= 250
μ
A (Note 2)
250
-
-
V
BV
DSS
/
T
J
Breakdown Voltage Tem-
perature Coefficient
I
D
= 250
μ
A, Referenced to 25°C
-
0.31
-
V
I
DSS
Zero Gate Voltage
Drain Current
V
IN
= 0V, V
DS
= 250V
-
-
250
μ
A
R
DS(on)
Static Drain-Source
On-Resistance
V
CC
= V
BS
= 15V, V
IN
= 5V, I
D
= 1.0A
-
1.4
1.8
V
SD
Drain-Source Diode
Forward Voltage
V
CC
= V
BS
= 15V, V
IN
= 0V, I
D
= -1.0A
-
-
1.2
V
t
ON
t
OFF
t
rr
E
ON
E
OFF
Switching Times
V
PN
= 150V, V
CC
= V
BS
= 15V, I
D
= 1.0A
V
IN
= 0V
5V
Inductive load L=3mH
High- and low-side FRFET switching
(Note 3)
-
1076
-
ns
-
660
-
ns
-
108
-
ns
-
47
-
μ
J
-
3.1
-
μ
J
RBSOA
Reverse-bias Safe Oper-
ating Area
V
PN
= 200V, V
CC
= V
BS
= 15V, I
D
= I
DP
, V
DS
=BV
DSS
,
T
J
= 150°C
High- and low-side FRFET switching (Note 4)
Full Square
Conditions
Min
Typ Max
Units
I
QCC
Quiescent V
CC
Current
V
CC
=15V, V
IN
=0V
Applied between V
CC
and COM
Applied between V
B(U)
-U,
V
B(V)
-V, V
B(W)
-W
-
-
160
μ
A
I
QBS
Quiescent V
BS
Current
V
BS
=15V, V
IN
=0V
-
-
100
μ
A
UV
CCD
UV
CCR
UV
BSD
UV
BSR
V
IH
V
IL
I
IH
I
IL
Low-side Undervoltage
Protection (Figure 6)
V
CC
Undervoltage Protection Detection Level
V
CC
Undervoltage Protection Reset Level
V
BS
Undervoltage Protection Detection Level
V
BS
Undervoltage Protection Reset Level
Logic High Level
Applied between IN and COM
Logic Low Level
7.4
8.0
9.4
V
8.0
8.9
9.8
V
High-side Undervoltage
Protection (Figure 7)
7.4
8.0
9.4
V
8.0
8.9
9.8
V
ON Threshold Voltage
3.0
-
-
V
OFF Threshold Voltage
-
-
0.8
V
Input Bias Current
V
IN
= 5V
V
IN
= 0V
Applied between IN and COM
-
10
20
μ
A
-
-
2
μ
A