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參數(shù)資料
| 型號(hào)： | FSF055R |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 25 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | FSF055R |
3-98
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
40
30
10
100
10
1
1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
300
200
0.1
1ms
100ms
10ms
100
μ
s
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 25A
N
10
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
T
θ
J
)
0.001
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
SINGLE PULSE
0.05
0.02
0.01
0.5
0.1
0.2
P
DM
t
1
t
2
FSF055D, FSF055R
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| FSF055R3 | 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSF055R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF055R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF055R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF05A20 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:FRD - Low Forward Voltage Drop |
| FSF05A20B | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:FRD - Low Forward Voltage Drop |
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