- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375933 > FSF254R4 (HARRIS SEMICONDUCTOR) 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | FSF254R4 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 18 A, 250 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, METAL, TO-254AA, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | FSF254R4 |
3-115
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 18A
0.6
-
1.8
V
Reverse Recovery Time
t
rr
I
SD
= 18A, dI
SD
/dt = 100A/
μ
s
-
-
690
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= 200V
V
GS
= 12V, I
D
= 18A
V
GS
= 12V, I
D
= 12A
-
250
V
Gate to Source Threshold Volts
(Note 3)
1.5
4.0
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
Zero Gate Leakage
(Note 3)
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
3.21
V
Drain to Source On Resistance
(Notes 1, 3)
-
.170
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
(Note 4)
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating
Area
SEESOA
Ni
26
43
-20
250
Br
37
36
-5
250
Br
37
36
-10
200
Br
37
36
-15
125
Br
37
36
-20
50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
00
-10
-15
-20
-25
-5
V
GS
(V)
V
D
300
200
100
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
FSF254D, FSF254R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSF450D | 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF450D1 | 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF450D3 | 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF450R | 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF450R1 | 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSF2606 | 制造商:Microsemi Corporation 功能描述:TRANS MOSFET N-CH 26A 3PIN TO-254 - Bulk |
| FSF351D | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:5-PHASE STEPPING SYSTEMS |
| FSF351D-GX10 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:5-PHASE STEPPING SYSTEMS |
| FSF351D-GX20 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:5-PHASE STEPPING SYSTEMS |
| FSF351D-GX3.6 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:5-PHASE STEPPING SYSTEMS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。