參數(shù)資料
型號： FSGJ063D1
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-254AA
中文描述： 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 70A條（丁）|對254AA
文件頁數(shù)： 6/7頁
文件大?。?/td> 104K
代理商： FSGJ063D1
2001 Fairchild Semiconductor Corporation
FSGJ063R Rev. B
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent)
T
C
= 25
o
C, Unless Otherwise Specified
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
Test Circuits and Waveforms
(Continued)
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
PARAMETER
SYMBOL
I
GSS
I
DSS
r
DS(ON)
V
GS(TH)
TEST CONDITIONS
V
GS
=
±
24V
V
DS
= 80% Rated Value
T
C
= 25
o
C at Rated I
D
I
D
= 1.0mA
MAX
UNITS
nA
μ
A
V
Gate to Source Leakage Current
±
20 (Note 8)
±
25 (Note 8)
±
20% (Note 9)
±
20% (Note 9)
Zero Gate Voltage Drain Current
Drain to Source On Resistance
Gate Threshold Voltage
NOTES:
8. Or 100% of Initial Reading (whichever is greater).
9. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Unclamped Inductive Switching
Thermal Response
Gate Stress
V
GS(PEAK)
= 20V, L = 0.1mH; Limit = 180A
t
H
= 100ms; V
H
= 25V; I
H
= 4A; LIMIT = 100mV
V
GS
= 36V, t = 250
μ
s
Optional
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
MIL-PRF-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
All Delta Parameters Listed in the Delta Tests and
Limits Table
MIL-PRF-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 160 hours
10%
MIL-PRF-19500, Group A, Subgroup 2
V
GS(PEAK)
= 20V, L = 0.1mH; Limit = 180A
t
H
= 100ms; V
H
= 25V; I
H
= 4A; LIMIT = 100mV
V
GS
= 36V, t = 250
μ
s
Required
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
MIL-PRF-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
All Delta Parameters Listed in the Delta Tests and
Limits Table
MIL-PRF-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 240 hours
5%
MIL-PRF-19500, Group A,
Subgroups 2 and 3
Pind
Pre Burn-In Tests (Note 10)
Steady State Gate
Bias (Gate Stress)
Interim Electrical Tests (Note 10)
Steady State Reverse
Bias (Drain Stress)
PDA
Final Electrical Tests (Note 10)
NOTE:
10. Test limits are identical pre and post burn-in.
Additional Tests
PARAMETER
SYMBOL
SOA
V
SD
TEST CONDITIONS
MAX
24
200
UNITS
A
mV
Safe Operating Area
Thermal Impedance
V
DS
= 24V, t = 10ms
t
H
= 500ms; V
H
=25V; I
H
= 4A
FSGJ063R
相關(guān)PDF資料
PDF描述
FSGJ063R3 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-254AA
FSGS134R3 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 16A I(D) | TO-257AA
FSGS134R4 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 16A I(D) | TO-257AA
FSGS234D1 TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 11A I(D) | TO-257AA
FSGS234R3 TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 11A I(D) | TO-257AA
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