參數(shù)資料
型號(hào)： FSGL234R
廠商： Intersil Corporation
英文描述： Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管)
中文描述： 抗輻射，抗SEGR N溝道功率MOSFET（抗輻射?溝道馬鞍山場(chǎng)效應(yīng)管）
文件頁數(shù)： 3/8頁
文件大?。?/td> 80K
代理商： FSGL234R
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
Q
RR
I
SD
= 7A
I
SD
= 7A, dI
SD
/dt = 100A/
μ
s
-
-
1.5
V
Reverse Recovery Time
-
-
360
ns
Reverse Recovery Charge
-
1.7
-
μ
C
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0, V
DS
= 200V
V
GS
= 12V, I
D
= 7A
V
GS
= 12V, I
D
= 4A
250
-
V
Gate to Source Threshold Volts
(Note 3)
2.0
4.5
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
Zero Gate Leakage
(Note 3)
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
1.82
V
Drain to Source On Resistance
(Notes 1, 3)
-
0.255
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
250
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating Area
SEESOA
Br
37
36
-20
I
60
32
-10
250
Au
82
28
-5
200
Au
82
28
-10
150
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm
2
(Typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
0
0
-20
LET = 60MeV/mg/cm
2
, RANGE = 32m
LET = 82MeV/mg/cm
2
, RANGE = 28m
LET = 37MeV/mg/cm
2
, RANGE = 36m
V
D
200
-4
-8
-12
-16
V
GS
(V)
-24
300
250
150
100
50
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
V
D
LET = 82 GOLD
LET = 60 IODINE
LET = 37 BROMINE
240
200
160
120
80
40
0
-30
0
-5
-10
-15
-20
-25
V
GS
(V)
280
-35
-40
-45
-50
FSGL234R
相關(guān)PDF資料
PDF描述
FSGS230D1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
FSGS230R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管)
FSGS230R3 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
FSGS230R4 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
FSGYC260D1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSGM0465R 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Green-Mode Fairchild Power Switch
FSGM0465RB 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Green-Mode Fairchild Power Switch
FSGM0465RBLDTU 功能描述:電源開關(guān) IC - 配電 SMPS Power Switch 4A, 650V RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
FSGM0465RBUDTU 功能描述:電源開關(guān) IC - 配電 SMPS Power Switch 4A, 650V RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
FSGM0465RBWDTU 功能描述:電源開關(guān) IC - 配電 SMPS Power Switch 4A, 650V RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*