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參數(shù)資料
| 型號(hào)： | FSGS134R3 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 16A I(D) | TO-257AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 150伏五（巴西）直| 16A條（丁）|對(duì)257AA |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 192K |
| 代理商： | FSGS134R3 |
4-3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
V
SD
t
rr
Q
RR
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
1.2
MAX
1.2
200
-
UNITS
V
ns
μ
C
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 16A
I
SD
= 16A, dI
SD
/dt = 100A/
μ
s
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Volts
(Note 3)
Gate to Source Threshold Volts
(Note 3)
Gate to Body Leakage
(Notes 2, 3)
Zero Gate Leakage
(Note 3)
Drain to Source On-State Volts
(Notes 1, 3)
Drain to Source On Resistance
(Notes 1, 3)
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0, V
DS
= 120V
V
GS
= 12V, I
D
= 16A
V
GS
= 12V, I
D
= 11A
MIN
150
2.0
-
-
-
-
MAX
-
4.5
100
25
1.68
0.099
UNITS
V
V
nA
μ
A
V
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
SEESOA
ENVIRONMENT
(NOTE 5)
(Note 6
)
TYPICAL LET
(MeV/mg/cm)
37
60
82
82
APPLIED
V
GS
BIAS
(V)
-20
-10
-5
-10
(Note 7)
MAXIMUM
V
DS
BIAS
(V)
150
150
120
90
TYPICAL RANGE
(
μ
)
36
32
28
28
Single Event Effects Safe Operating Area
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
00
-20
LET = 60MeV/mg/cm
2
, RANGE = 32
μ
LET = 82MeV/mg/cm
2
, RANGE = 28
μ
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
-4
-8
-12
V
GS
(V)
-16
-24
150
100
50
V
D
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
V
D
120
80
40
0
0
NEGATIVE V
GS
BIAS (V)
20
LET = 37
LET = 82
LET = 60
160
200
5
10
15
25
30
40
35
FSGS134R
2001 Fairchild Semiconductor Corporation
FSGS134R Rev. A1
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