參數(shù)資料
型號(hào)： FSGYC260R
廠商： Intersil Corporation
英文描述： Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管)
中文描述： 抗輻射，抗SEGR N溝道功率MOSFET（抗輻射?溝道馬鞍山場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 7/8頁(yè)
文件大?。?/td> 82K
代理商： FSGYC260R
7
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Pre and Post Burn-In Read and Record
Data
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D
- Attributes Data Sheet
- Pre and Post RAD Read and Record Data
Class S - Equivalents
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
F. Group A
- Attributes Data Sheet
G. Group B
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
I. Group D
- Attributes Data Sheet
- Pre and Post Radiation Data
FSGYC260R
相關(guān)PDF資料
PDF描述
FSGYC260R3 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
FSGYC260R4 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
FSGYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管)
FSGYE230D1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
FSGYE230R Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSGYC260R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
FSGYC260R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
FSGYC264D1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 44A I(D) | SMT
FSGYC264R3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 44A I(D) | SMT
FSGYC264R4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 44A I(D) | SMT
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