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參數(shù)資料
| 型號(hào)： | FSGYE230R |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFET |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | FSGYE230R |
4
FIGURE 3. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
Performance Curves
Unless Otherwise Specified
(Continued)
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
10
14
12
2
4
6
8
10
1
1
0.1
10
100
1000
100
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
AREA MAY BE
LIMITED BY r
DS(ON)
OPERATION IN THIS
100
μ
s
1ms
10ms
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 7A
10
8
6
4
2
0
200
160
120
80
40
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
V
GS
= 6V
V
GS
= 8V
V
GS
= 10V
V
GS
= 12V
V
GS
= 14V
DESCENDING ORDER
FSGYE230R
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSGYE230R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFET |
| FSGYE230R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFET |
| FSGYE234D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 9A I(D) | SMT |
| FSGYE234R3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 9A I(D) | SMT |
| FSGYE234R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 9A I(D) | SMT |
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