參數(shù)資料
型號： FSJ163D3
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
中文描述： 60 A, 130 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
文件頁數(shù)： 3/8頁
文件大?。?/td> 56K
代理商： FSJ163D3
4-3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
I
SD
= 60A
I
SD
= 60A, dI
SD
/dt = 100A/
μ
s
0.6
-
1.8
V
Reverse Recovery Time
-
-
550
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= 104V
V
GS
= 12V, I
D
= 60A
V
GS
= 12V, I
D
= 38A
130
-
V
Gate to Source Threshold Volts
(Note 3)
1.5
4.0
V
Gate-Body Leakage
(Notes 2, 3)
-
100
nA
Zero-Gate Leakage
(Note 3)
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
1.89
V
Drain to Source On Resistance
(Notes 1, 3)
-
0.030
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
130
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating Area
SEESOA
Ni
26
43
-20
Br
37
36
-5
130
Br
37
36
-10
104
Br
37
36
-15
78
Br
37
36
-20
52
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
120
100
80
60
40
20
0
0
-10
-15
-20
-25
-5
V
GS
(V)
V
D
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
140
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
FSJ163D, FSJ163R
相關(guān)PDF資料
PDF描述
FSJ260D GT 3C 3#16S SKT PLUG
FSJ260D1 Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:6; Connector Shell Size:14S; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
FSJ260D3 Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:6; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
FSJ260R Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:10; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
FSJ260R1 Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:17; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSJ163R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSJ163R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSJ163R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSJ163R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSJ260D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
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