參數(shù)資料
型號(hào)： FSJ260R3
廠商： INTERSIL CORP
元件分類(lèi)： JFETs
英文描述： 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
中文描述： 44 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
封裝： HERMETIC SEALED, METAL, TO-254AA, 3 PIN
文件頁(yè)數(shù)： 3/8頁(yè)
文件大小： 46K
代理商： FSJ260R3
3-145
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 44A
0.6
-
1.8
V
Reverse Recovery Time
t
rr
I
SD
= 44A, dI
SD
/dt = 100A/
μ
s
-
-
560
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= 160V
V
GS
= 12V, I
D
= 44A
V
GS
= 12V, I
D
= 28A
200
-
V
Gate to Source Threshold Volts
(Note 3)
1.5
4.0
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
Zero Gate Leakage
(Note 3)
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
2.31
V
Drain to Source On Resistance
(Notes 1, 3)
-
0.050
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
(Note 4)
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating
Area
SEESOA
Ni
26
43
-20
200
Br
37
36
-5
200
Br
37
36
-10
160
Br
37
36
-15
100
Br
37
36
-20
40
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
120
80
40
0
0
-10
-15
-20
-25
-5
V
GS
(V)
V
D
160
200
TEMP = 25
o
C
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
FSJ260D, FSJ260R
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSJ260R4 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSJ264D 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSJ264D1 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSJ264D3 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSJ264R 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
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