參數(shù)資料
型號： FSJ264R3
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： GT 10C 10#16 PIN RECP
中文描述： 33 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
封裝： HERMETIC SEALED, METAL, TO-254AA, 3 PIN
文件頁數(shù)： 4/9頁
文件大?。?/td> 48K
代理商： FSJ264R3
3-152
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
30
10
40
100
10
1
1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
300
1000
0.1
T
C
= 25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100
μ
s
1ms
10ms
100ms
CHARGE
Q
GD
Q
G
V
G
Q
GS
BASIC GATE CHARGE WAVEFORM
12V
2.5
2.0
1.5
1.0
0.5
0.0-80
-40
0
40
80
120
160
N
D
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 21A
FSJ264D, FSJ264R
相關(guān)PDF資料
PDF描述
FSJ264R4 GT 10C 10#16 PIN RECP
FSJ264D Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:6; Connector Shell Size:14S; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
FSJ9055D1 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9055R1 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9055R3 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSJ264R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSJ4RN-75A 制造商:ANDREWS 功能描述:CABLE, COAXIAL, IMPEDANCE 75 OHM +/- 2 OHM, 1/2", HELIAX SUPER
FSJ9055D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9055D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9055D3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
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