參數(shù)資料
型號(hào)： FSJ9055D1
廠商： INTERSIL CORP
元件分類(lèi)： JFETs
英文描述： 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
中文描述： 55 A, 60 V, 0.029 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 66K
代理商： FSJ9055D1
3-222
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSJ9055D, FSJ9055R
-60
-60
UNITS
V
V
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
55
35
165
±
20
A
A
A
V
125
50
1.20
165
55
165
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
60
-
-
V
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-7.0
V
-2.0
-
-6.0
V
-1.0
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -48V,
V
GS
= 0V
-
-
25
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
r
DS(ON)12
V
GS
= -12V, I
D
= 55A
I
D
= 35A,
V
GS
= -12V
-
-
-1.75
V
Drain to Source On Resistance
T
C
= 25
o
C
T
C
= 125
o
C
-
0.020
0.029
-
-
0.044
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DD
= -30V, I
D
= 55A,
R
L
= 0.55
, V
GS
= -12V,
R
GS
= 2.35
-
-
55
ns
Rise Time
-
-
90
ns
Turn-Off Delay Time
-
-
80
ns
Fall Time
-
-
35
ns
Total Gate Charge
V
GS
= 0V to -20V
V
GS
= 0V to -12V
V
GS
= 0V to -2V
V
DD
= -30V,
I
D
= 55A
-
-
250
nC
Gate Charge at 12V
-
130
160
nC
Threshold Gate Charge
-
-
16
nC
Gate Charge Source
-
36
48
nC
Gate Charge Drain
-
42
53
nC
Plateau Voltage
I
D
= 55A, V
DS
= -15V
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
-
-6
-
V
Input Capacitance
-
6300
-
pF
Output Capacitance
-
2250
-
pF
Reverse Transfer Capacitance
-
300
-
pF
Thermal Resistance Junction to Case
-
-
0.83
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
-
-
40
FSJ9055D, FSJ9055R
相關(guān)PDF資料
PDF描述
FSJ9055R1 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9055R3 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9055D 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9055D3 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9055R 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSJ9055D3 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9055R 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9055R1 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9055R3 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9055R4 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
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