參數(shù)資料
型號(hào)： FSJ9055R3
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
中文描述： 55 A, 60 V, 0.029 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
封裝： HERMETIC SEALED, METAL, TO-254AA, 3 PIN
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 66K
代理商： FSJ9055R3
3-223
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
I
SD
= 55A
I
SD
= 55A, dI
SD
/dt = 100A/
μ
s
-0.6
-
-1.8
V
Reverse Recovery Time
-
-
110
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= -48V
V
GS
= -12V, I
D
= 55A
V
GS
= -12V, I
D
= 35A
-60
-
V
Gate to Source Threshold Volts
(Note 3)
-2.0
-6.0
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
μ
A
V
Zero Gate Leakage
(Note 3)
-
25
Drain to Source On-State Volts
(Notes 1, 3)
-
-1.75
Drain to Source On Resistance
(Notes 1, 3)
-
0.029
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= -12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
(Note 4)
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
43
Single Event Effects Safe Operating
Area
SEESOA
Ni
26
20
-60
Br
37
36
10
-60
Br
37
36
15
-48
Br
37
36
20
-36
Br
60
31
0
-60
I
60
31
5
-48
I
60
31
10
-36
I
60
31
15
-24
I
60
31
20
-12
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
LET = 60MeV/mg/cm
2
, RANGE = 31
μ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
-40
0
0
10
15
20
25
5
V
GS
(V)
V
D
-10
-20
-30
-50
-60
-70
TEMP = 25
o
C
-300
-100
-10
L
DRAIN SUPPLY (V)
-1000
ILM = 10A
300A
1E-4
1E-5
1E-6
-30
100A
30A
1E-7
1E-3
FSJ9055D, FSJ9055R
相關(guān)PDF資料
PDF描述
FSJ9055D 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9055D3 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9055R 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9055R4 Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0709-6 00; No. of Positions: 26; Connector Type: Panel; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 2; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 85; General Description: In-line adapter; Both ends male contacts; Pin contact
FSJ9160 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSJ9055R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9160 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9160D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9160D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9160D3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
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