參數(shù)資料
型號： FSJ9160D1
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
中文描述： 44 A, 100 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
文件頁數(shù)： 2/8頁
文件大小： 46K
代理商： FSJ9160D1
3-228
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSJ9160D, FSJ9160R
-100
-100
UNITS
V
V
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
44
28
132
±
20
A
A
A
V
192
77
1.54
132
44
132
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
-100
-
-
V
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-7.0
V
-2.0
-
-6.0
V
-1.0
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -80V,
V
GS
= 0V
-
-
25
μ
A
μ
A
-
-
250
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
r
DS(ON)12
V
GS
= -12V, I
D
= 44A
I
D
= 28A,
V
GS
= -12V
-
-
-2.66
V
Drain to Source On Resistance
T
C
= 25
o
C
T
C
= 125
o
C
-
0.039
0.055
-
-
0.092
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DD
= -50V, I
D
= 44A,
R
L
= 1.14
, V
GS
= -12V,
R
GS
= 2.35
-
-
40
ns
Rise Time
-
-
80
ns
Turn-Off Delay Time
-
-
100
ns
Fall Time
-
-
45
ns
Total Gate Charge
V
GS
= 0V to -20V
V
GS
= 0V to -12V
V
GS
= 0V to -2V
V
DD
= -50V,
I
D
= 44A
-
-
400
nC
Gate Charge at 12V
-
200
230
nC
Threshold Gate Charge
-
-
17
nC
Gate Charge Source
-
40
55
nC
Gate Charge Drain
-
74
98
nC
Plateau Voltage
I
D
= 44A, V
DS
= -15V
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
-
-7
-
V
Input Capacitance
-
5500
-
pF
Output Capacitance
-
1500
-
pF
Reverse Transfer Capacitance
-
500
-
pF
Thermal Resistance Junction to Case
-
-
0.65
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
-
-
40
FSJ9160D, FSJ9160R
相關(guān)PDF資料
PDF描述
FSJ9160D3 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9160R1 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9160R3 Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0512-1 00; No. of Positions: 26; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 2; Operating Temperature Range (degrees C): -30 to 85; General Description: Housing; For Discrete wire; Crimping
FSJ9160R4 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSJ9160D3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9160R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9160R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9160R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSJ9160R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*