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參數(shù)資料
| 型號(hào)： | FSJ9160D |
| 廠商： | Intersil Corporation |
| 英文描述： | 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| 中文描述： | 第44A，- 100V的，0.055歐姆，拉德硬，SEGR性，P通道功率MOSFET |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | FSJ9160D |
3-232
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent)
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
±
20 (Note 7)
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80% Rated Value
±
25 (Note 7)
μ
A
On Resistance
r
DS(ON)
T
C
= 25
o
C at Rated I
D
±
20% (Note 8)
Gate Threshold Voltage
V
GS(TH)
I
D
= 1.0mA
±
20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Gate Stress
V
GS
= -30V, t = 250
μ
s
V
GS
= -30V, t = 250
μ
s
Pind
Optional
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 160 hours
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 240 hours
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Safe Operating Area
SOA
V
DS
= -80V, t = 10ms
7.0
A
Unclamped Inductive Switching
I
AS
V
GS(PEAK)
= -15V, L = 0.1mH
132
A
Thermal Response
V
SD
t
H
= 100ms; V
H
= -25V; I
H
= 4A
90
mV
Thermal Impedance
V
SD
t
H
= 500ms; V
H
= -25V; I
H
= 4A
160
mV
FSJ9160D, FSJ9160R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSJ9160D1 | 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9160D3 | 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9160R | 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9160R1 | 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9160R3 | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0512-1 00; No. of Positions: 26; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 2; Operating Temperature Range (degrees C): -30 to 85; General Description: Housing; For Discrete wire; Crimping |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSJ9160D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9160D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9160R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9160R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9160R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
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