- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375935 > FSL13A0R (Intersil Corporation) 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | FSL13A0R |
| 廠商： | Intersil Corporation |
| 英文描述： | 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 第9A，100V的，0.180歐姆，拉德硬，SEGR耐，N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | FSL13A0R |
4-8
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
FSL13A0D, FSL13A0R
TO-205AF
3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE
L
A
b
D
1
D
h
1
2
3
e
e
1
SEATING
PLANE
90
o
e
2
j
k
P
45
o
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.160
0.180
4.07
4.57
-
b
0.016
0.021
0.41
0.53
2, 3
D
0.350
0.370
8.89
9.39
-
D
1
e
0.315
0.335
8.01
8.50
-
0.095
0.105
2.42
2.66
4
e
1
e
2
h
0.190
0.210
4.83
5.33
4
0.095
0.105
2.42
2.66
4
0.010
0.020
0.26
0.50
-
j
0.028
0.034
0.72
0.86
-
k
0.029
0.045
0.74
1.14
-
L
0.500
0.560
12.70
14.22
3
P
0.075
-
1.91
-
5
NOTES:
1. These dimensions are within allowable dimensions of Rev. E of
JEDEC TO-205AF outline dated 11-82.
2. Lead dimension (without solder).
3. Solder coating may vary along lead length, add typically 0.002
inches (0.05mm) for solder coating.
4. Positionofleadtobemeasured0.100inches(2.54mm)frombottom
of seating plane.
5. This zone controlled for automatic handling. The variation in
actual diameter within this zone shall not exceed 0.010 inches
(0.254mm).
6. Lead no. 3 butt welded to stem base.
7. Controlling dimension: Inch.
8. Revision 3 dated 6-94.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSL13A0R4 | 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL13A0D | 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL13A0D3 | 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL13A0R1 | 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL214D3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSL13A0R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL13A0R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL13A0R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL13AOD1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9A I(D) | TO-205AF |
| FSL13AOD3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9A I(D) | TO-205AF |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。