參數(shù)資料
型號(hào): FSL214R
廠商: Intersil Corporation
英文描述: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
中文描述: 抗輻射,抗SEGR N溝道功率MOSFET
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 57K
代理商: FSL214R
4-5
Screening Information
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
10
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
1
0.01
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
0
IF R = 0
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
D(ON)
t
R
90%
10%
V
DS
90%
10%
t
F
t
D(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSL214D, FSL214R
相關(guān)PDF資料
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FSL214R1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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FSL214D Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSL214R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSL214R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSL214R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSL230 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSL230D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs