參數(shù)資料
型號(hào)： FSL23A0R4
廠商： INTERSIL CORP
元件分類(lèi)： JFETs
英文描述： 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
中文描述： 6 A, 200 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 72K
代理商： FSL23A0R4
4-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSL23A0D, FSL23A0R
200
200
UNITS
V
V
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . .I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
6
4
18
±
20
A
A
A
V
25
10
0.20
18
6
18
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
200
-
-
V
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
5.0
V
1.5
-
4.0
V
0.5
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160V,
V
GS
= 0V
-
-
25
μ
A
μ
A
-
-
250
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 6A
I
D
= 4A,
V
GS
= 12V
-
-
2.21
V
Drain to Source On Resistance
T
C
= 25
o
C
T
C
= 125
o
C
-
0.280
0.350
-
-
0.637
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DD
= 100V, I
D
= 6A,
R
L
= 16.7
, V
GS
= 12V,
R
GS
= 7.5
-
-
20
ns
Rise Time
-
-
30
ns
Turn-Off Delay Time
-
-
55
ns
Fall Time
-
-
15
ns
Total Gate Charge
V
GS
= 0V to 20V
V
GS
= 0V to 12V
V
GS
= 0V to 2V
V
DD
= 100V,
I
D
= 6A
-
-
57
nC
Gate Charge at 12V
-
34
38
nC
Threshold Gate Charge
-
-
1.9
nC
Gate Charge Source
-
6.0
6.8
nC
Gate Charge Drain
-
18
20
nC
Plateau Voltage
I
D
= 6A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
7
-
V
Input Capacitance
-
750
-
pF
Output Capacitance
-
180
-
pF
Reverse Transfer Capacitance
-
50
-
pF
Thermal Resistance Junction to Case
-
-
5.0
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
-
-
175
FSL23A0D, FSL23A0R
相關(guān)PDF資料
PDF描述
FSL23A0D3 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
FSL23A0R1 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
FSL23A4D RECTIFIER BRIDGE 3A 600V 50A-ifsm 1.2V-vf 10uA-ir PBPC3 200/BOX
FSL23A4D1 RECTIFIER BRIDGE 3A 1000V 50A-ifsm 1.2V-vf 10uA-ir PBPC3 200/BOX
FSL23A4D3 RECTIFIER BRIDGE 6A 100V 125A-ifsm 1.1V-vf 10uA-ir PBPC3 200/BOX
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSL23A4D 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSL23A4D1 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSL23A4D3 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSL23A4R 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSL23A4R1 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*