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參數(shù)資料
| 型號(hào)： | FSL430D1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 2 A, 500 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 46K |
| 代理商： | FSL430D1 |
3-49
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 2A
0.6
-
1.8
V
Reverse Recovery Time
t
rr
I
SD
= 2A, dI
SD
/dt = 100A/
μ
s
-
-
390
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= 400V
V
GS
= 12V, I
D
= 2A
V
GS
= 12V, I
D
= 1A
500
-
V
Gate to Source Threshold Volts
(Note 3)
1.5
4.0
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
Zero Gate Leakage
(Note 3)
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
5.25
V
Drain to Source On Resistance
(Notes 1, 3)
-
2.50
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
(Note 4)
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating
Area
SEESOA
Ni
26
43
-15
500
Ni
26
43
-20
450
Br
37
36
-5
500
Br
37
36
-10
400
Br
37
36
-15
100
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
0
0
-10
-15
-20
-25
-5
V
GS
(V)
V
D
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
300
200
100
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
400
500
600
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
FSL430D, FSL430R
相關(guān)PDF資料 |
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| FSL430D3 | 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL430R1 | 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL430R3 | 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL430R4 | 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSL430D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL430D4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-205AF |
| FSL430R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL430R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL430R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
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