參數(shù)資料
型號(hào): FSL430D
廠商: Intersil Corporation
英文描述: 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
中文描述: 第2A,500V及2.50歐姆,拉德硬,SEGR耐,N溝道功率MOSFET
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 46K
代理商: FSL430D
3-48
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSL430D, FSL430R
500
500
UNITS
V
V
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
2
1
6
A
A
A
V
±
20
25
10
0.20
6
2
6
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
500
-
-
V
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
5.0
V
1.5
-
4.0
V
0.5
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 400V,
V
GS
= 0V
-
-
25
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 2A
I
D
= 1A,
V
GS
= 12V
-
5.25
V
Drain to Source On Resistance
T
C
= 25
o
C
T
C
= 125
o
C
-
1.80
2.50
-
-
4.80
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DD
= 250V, I
D
= 2A,
R
L
= 125
, V
GS
= 12V,
R
GS
= 7.5
-
-
80
ns
Rise Time
-
-
100
ns
Turn-Off Delay Time
-
-
150
ns
Fall Time
-
-
140
ns
Total Gate Charge
V
GS
= 0V to 20V
V
GS
= 0V to 12V
V
GS
= 0V to 2V
V
DD
= 250V,
I
D
= 2A
-
-
52
nC
Gate Charge at 12V
-
28
35
nC
Threshold Gate Charge
-
-
2.1
nC
Gate Charge Source
-
4.7
6.7
nC
Gate Charge Drain
-
13
16
nC
Plateau Voltage
I
D
= 2A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
6
-
V
Input Capacitance
-
770
-
pF
Output Capacitance
-
115
-
pF
Reverse Transfer Capacitance
-
20
-
pF
Thermal Resistance Junction to Case
-
-
5.0
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
-
-
175
FSL430D, FSL430R
相關(guān)PDF資料
PDF描述
FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSL9110R 30V N-Channel PowerTrench MOSFET
FSL9110D1 30V N-Channel PowerTrench MOSFET
FSL9110D3 30V N-Channel PowerTrench MOSFET
FSL9110D 30V N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSL430D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSL430D3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSL430D4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-205AF
FSL430R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSL430R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs