參數(shù)資料
型號: FSL430R4
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
中文描述: 2 A, 500 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
封裝: HERMETIC SEALED, METAL CAN-3
文件頁數(shù): 4/8頁
文件大小: 46K
代理商: FSL430R4
3-50
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
2.5
2.0
1.5
1.0
0.5
10
1
1
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.01
1000
30
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100
μ
s
1ms
10ms
100ms
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 1A
N
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
T
θ
J
)
0.001
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
SINGLE PULSE
0.01
0.1
0.01
0.02
0.2
0.1
0.05
0.5
FSL430D, FSL430R
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