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參數(shù)資料
| 型號： | FSL430R |
| 廠商： | Intersil Corporation |
| 英文描述： | 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 第2A，500V及2.50歐姆，拉德硬，SEGR耐，N溝道功率MOSFET |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 46K |
| 代理商： | FSL430R |
3-52
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent)
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
±
20 (Note 7)
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80% Rated Value
±
25 (Note 7)
μ
A
Drain to Source On Resistance
r
DS(ON)
T
C
= 25
o
C at Rated I
D
±
20% (Note 8)
Gate Threshold Voltage
V
GS(TH)
I
D
= 1.0mA
±
20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Gate Stress
V
GS
= 30V, t = 250
μ
s
V
GS
= 30V, t = 250
μ
s
Pind
Optional
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 160 hours
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 240 hours
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Safe Operating Area
SOA
V
DS
= 200V, t = 10ms
0.56
A
Unclamped Inductive Switching
I
AS
V
GS(PEAK)
= 15V, L = 0.1mH
6
A
Thermal Response
V
SD
t
H
= 10ms; V
H
= 25V; I
H
= 2A
125
mV
Thermal Impedance
V
SD
t
H
= 500ms; V
H
= 25V; I
H
= 1A
250
mV
FSL430D, FSL430R
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FSL430R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL430R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL430R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSL500C6Y00 | 制造商:Baumer Electric Ag 功能描述: |
| FSL65400127 | 功能描述:電位計 100mm Std. FR4 RoHS:否 制造商:Bourns 產品:Musical Syst Potentiometer 安裝風格:Panel 錐度:Audio, Linear 轉數(shù): 電阻:500 kOhms 元件類型:Carbon 軸類型:Round / Plain 端接類型:Solder Lug 電壓額定值:200 V 功率額定值:0.2 W 容差:20 % |
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