參數(shù)資料
型號(hào)： FSL9110R1
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 2.5 A, 100 V, 1.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
封裝： HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 57K
代理商： FSL9110R1
4-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSL9110D, FSL9110R
-100
-100
UNITS
V
V
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . .I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
2.5
1.5
7.5
±
20
A
A
A
V
15
6
0.12
7.5
2.5
7.5
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to +150
300
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
-100
-
-
V
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-7.0
V
-2.0
-
-6.0
V
-1.0
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -80V,
V
GS
= 0V
-
-
25
μ
A
μ
A
-
-
250
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
r
DS(ON)12
V
GS
= -12V, I
D
= 2.5A
I
D
= 1.5A,
V
GS
= -12V
-
-
-3.58
V
Drain to Source On Resistance
T
C
= 25
o
C
T
C
= 125
o
C
-
1.00
1.30
-
-
2.16
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DD
= -50V, I
D
= 2.5A,
R
L
= 20
, V
GS
-12V,
R
GS
= 7.5
-
-
20
ns
Rise Time
-
-
45
ns
Turn-Off Delay Time
-
-
40
ns
Fall Time
-
-
45
ns
Total Gate Charge
V
GS
= 0V to -20V
V
GS
= 0V to -12V
V
GS
= 0V to -2V
V
DD
= -50V,
I
D
= 2.5A
-
-
14
nC
Gate Charge at 12V
-
7.0
7.9
nC
Threshold Gate Charge
-
-
0.64
nC
Gate Charge Source
-
1.9
2.1
nC
Gate Charge Drain
-
3.4
3.8
nC
Plateau Voltage
I
D
= 2.5A, V
DS
= -15V
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
-
-7
-
V
Input Capacitance
-
175
-
pF
Output Capacitance
-
70
-
pF
Reverse Transfer Capacitance
-
20
-
pF
Thermal Resistance Junction to Case
-
8.3
-
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
-
175
-
FSL9110D, FSL9110R
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參數(shù)描述
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