參數(shù)資料
型號(hào): FSPS230F
廠商: Intersil Corporation
英文描述: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管)
中文描述: 抗輻射,抗SEGR N溝道功率MOSFET(抗輻射?溝道馬鞍山場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 80K
代理商: FSPS230F
4
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
FIGURE 7. TYPICAL NORMALIZEDr
DS(ON)
vsJUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
Performance Curves
Unless Otherwise Specified
(Continued)
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
10
14
12
2
4
6
8
16
18
10
1
1
0.1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
1000
100
I
D
,
AREA MAY BE
LIMITED BY r
DS(ON)
OPERATION IN THIS
100
μ
s
1ms
10ms
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 9A
10
8
6
4
2
0
40
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
20
10
50
I
D
,
V
GS
= 6V
V
GS
= 6V
V
GS
= 8V
V
GS
= 10V
V
GS
= 12V
V
GS
= 14V
FSPS230R, FSPS230F
相關(guān)PDF資料
PDF描述
FSPS230R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管)
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FSPS230F4 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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