- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375938 > FSPS234R (Intersil Corporation) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | FSPS234R |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET（抗輻射?溝道馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 81K |
| 代理商： | FSPS234R |
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
Q
RR
I
SD
= 11A
I
SD
= 11A, dI
SD
/dt = 100A/
μ
s
-
-
1.2
V
Reverse Recovery Time
-
-
410
ns
Reverse Recovery Charge
-
2.4
-
μ
C
Electrical Specifications up to 300K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
100K RAD
300K RAD
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0, V
DS
= 200V
V
GS
= 12V, I
D
= 11A
V
GS
= 12V, I
D
= 7A
250
-
250
V
Gate to Source Threshold Volts
(Note 3)
2.0
4.5
1.5
4.5
V
Gate to Body Leakage
(Notes 2, 3)
-
100
100
nA
Zero Gate Leakage
(Note 3)
-
25
50
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
2.53
3.74
V
Drain to Source On Resistance
(Notes 1, 3)
-
0.220
0.275
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
250
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating Area
SEESOA
Br
37
36
-10
Br
37
36
-15
200
I
60
32
-2
200
I
60
32
-8
150
Au
82
28
0
150
Au
82
28
-5
100
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
120
80
40
0
0
-20
160
LET = 60MeV/mg/cm
2
, RANGE = 32
μ
LET = 82MeV/mg/cm
2
, RANGE = 28
μ
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
V
D
200
240
-4
-8
-12
-16
V
GS
(V)
TEMP = 25
o
C
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
280
V
D
LET = 82 GOLD
LET = 60 IODINE
240
200
160
120
80
40
0
-30
0
-5
-10
-15
V
GS
-20
-25
280
LET = 37 BROMINE
FSPS234R, FSPS234F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSPYC260D1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYC260F | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管) |
| FSPYC260R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管) |
| FSPYC260F3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYC260F4 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSPS234R3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 11A I(D) | TO-257AA |
| FSPS234R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 11A I(D) | TO-257AA |
| FSPSC6X | 制造商:Hubbell Wiring Device-Kellems 功能描述:FIBER, ADAPT PNL,6FIB,6SC SMP,MTRJ,UNLD |
| FSPSC8 | 制造商:Hubbell Wiring Device-Kellems 功能描述:FIBER, ADAPT PNL,8FIB,8 SC SMPLX,P-BZ,BL |
| FSPSC8X | 制造商:Hubbell Wiring Device-Kellems 功能描述:FIBER, ADAPT PNL,8FIB,8SC SMP,MTRJ,UNLD |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。