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參數(shù)資料
| 型號(hào)： | FSPYC260F3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, LCC-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 83K |
| 代理商： | FSPYC260F3 |
4
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
Performance Curves
Unless Otherwise Specified
(Continued)
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
40
30
10
60
50
70
100
10
1
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
0.1
500
500
I
D
,
100
μ
s
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
1ms
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
N
D
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 37A
10
8
6
4
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
200
160
120
80
40
0
I
D
,
V
GS
= 8V
V
GS
= 10V
V
GS
= 12V
V
GS
= 14V
V
GS
= 6V
DESCENDING ORDER
FSPYC260R, FSPYC260F
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| FSPYC260F4 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSPYC260F4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYC260R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYC260R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYC260R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYC264D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 45A I(D) | SMT |
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