參數(shù)資料
型號(hào): FSPYC264D1
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 45A I(D) | SMT
中文描述: 晶體管| MOSFET的| N溝道| 250V五(巴西)直| 45A條(丁)|貼片
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 108K
代理商: FSPYC264D1
2001 Fairchild Semiconductor Corporation
FSPYC160R, FSPYC160F Rev. B
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 5. FORWARD BIAS SAFE OPERATING ARE A
FIGURE 6. BASIC GATE CHARGE WAVEFORM
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
Performance Curves
Unless Otherwise Specified
(Continued)
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
40
30
10
100
90
80
70
60
50
100
10
1
1
10
100
500
300
I
D
,
D
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
μ
s
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
1ms
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
N
D
T
J
,
JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 66A
10
8
6
4
2
0
200
160
120
80
40
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
V
GS
= 8V
V
GS
= 10V
V
GS
= 12V
V
GS
= 14V
V
GS
= 6V
FSPYC160R, FSPYC160F
相關(guān)PDF資料
PDF描述
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FSPYC264F4 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 45A I(D) | SMT
FSPYC264R3 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 45A I(D) | SMT
FSPYC264R4 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 45A I(D) | SMT
FSPYE130D1 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 20A I(D) | SMT