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參數(shù)資料
| 型號(hào)： | FSPYC264F4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 45A I(D) | SMT |
| 中文描述： | 晶體管| MOSFET的| N溝道| 250V五（巴西）直| 45A條（?。﹟貼片 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | FSPYC264F4 |
2001 Fairchild Semiconductor Corporation
FSPYC160R, FSPYC160F Rev. B
Source to Drain Diode Specifications
PARAMETER
SYMBOL
V
SD
t
rr
Q
RR
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
1.8
MAX
1.2
290
-
UNITS
V
ns
μ
C
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 70A
I
SD
= 70A, dI
SD
/dt = 100A/
μ
s
Electrical Specifications up to 300 krad
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= 80V
V
GS
= 12V, I
D
= 70A
V
GS
= 12V, I
D
= 66A
MIN
MAX
MIN
MAX
UNITS
V
V
nA
μ
A
V
100 krad
100
2.0
-
-
-
-
300 krad
100
1.5
-
-
-
-
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
-
-
4.5
100
25
0.77
0.0105
4.5
100
50
0.84
0.0115
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
SEESOA
ENVIRONMENT
(NOTE 5)
(NOTE 6
)
TYPICAL LET
(MeV/mg/cm)
37
60
82
82
APPLIED
V
GS
BIAS
(V)
-5
-2
0
-2
(NOTE 7)
MAXIMUM
V
DS
BIAS
(V)
100
80
60
30
TYPICAL
RANGE (
μ
)
36
32
28
28
Single Event Effects Safe Operating Area
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au.
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
120
80
40
00
-5
V
GS
(V)
20
100
60
V
D
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
-7
-6
-1
-2
-3
-4
LET = 60MeV/mg/cm
2
, RANGE = 32
μ
LET = 82MeV/mg/cm
2
, RANGE = 28
μ
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
0
40
80
100
60
20
50
40
30
20
10
0
60
NEGATIVE V
GS
BIAS (V)
V
D
LET = 82
LET = 37
LET = 60
FSPYC160R, FSPYC160F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSPYC264R3 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 45A I(D) | SMT |
| FSPYC264R4 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 45A I(D) | SMT |
| FSPYE130D1 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 20A I(D) | SMT |
| FSPYE130F3 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 20A I(D) | SMT |
| FSPYE130F4 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 20A I(D) | SMT |
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