- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375938 > FSPYC264F (Intersil Corporation) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | FSPYC264F |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管) |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET（抗輻射?溝道馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 86K |
| 代理商： | FSPYC264F |
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
V
SD
t
rr
Q
RR
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
6.8
MAX
1.2
590
-
UNITS
V
ns
μ
C
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 45A
I
SD
= 45A, dI
SD
/dt = 100A/
μ
s
Electrical Specifications up to 300K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0, V
DS
= 200V
V
GS
= 12V, I
D
= 45A
V
GS
= 12V, I
D
= 29A
MIN
100K RAD
250
2.0
-
-
-
-
MAX
MIN
300K RAD
250
1.5
-
-
MAX
UNITS
V
V
nA
μ
A
V
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
-
-
4.5
100
25
2.21
0.046
4.5
100
50
2.70
0.055
-
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
SEESOA
ENVIRONMENT
(NOTE 5)
TYPICAL LET
(MeV/mg/cm)
37
37
60
60
82
82
APPLIED
V
GS
BIAS
(V)
-10
-15
-2
-8
0
-5
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
250
200
200
150
150
100
ION
SPECIES
Br
Br
I
I
Au
Au
TYPICAL
RANGE (
μ
)
36
36
32
32
28
28
Single Event Effects Safe Operating Area
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm
2
(Typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
120
80
40
0
0
-20
160
LET = 60MeV/mg/cm
2
, RANGE = 32
μ
LET = 82MeV/mg/cm
2
, RANGE = 28
μ
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
V
D
200
240
-4
-8
-12
-16
V
GS
(V)
TEMP = 25
o
C
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
280
V
D
LET = 82 GOLD
LET = 60 IODINE
240
200
160
120
80
40
0
-30
0
-5
-10
-15
-20
-25
V
GS
(V)
280
LET = 37 BROMINE
FSPYC264R, FSPYC264F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSPYC264R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管) |
| FSPYE230 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE230D1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE230F | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSPYE230F3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSPYC264F3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 45A I(D) | SMT |
| FSPYC264F4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 45A I(D) | SMT |
| FSPYC264R3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 45A I(D) | SMT |
| FSPYC264R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 45A I(D) | SMT |
| FSPYE130D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 20A I(D) | SMT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。