參數(shù)資料
型號: FSPYC264R
廠商: Intersil Corporation
英文描述: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管)
中文描述: 抗輻射,抗SEGR N溝道功率MOSFET(抗輻射?溝道馬鞍山場效應(yīng)管)
文件頁數(shù): 4/8頁
文件大?。?/td> 86K
代理商: FSPYC264R
4
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
FIGURE 7. TYPICALNORMALIZEDr
DS(ON)
vsJUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
Performance Curves
Unless Otherwise Specified
(Continued)
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
40
30
10
50
100
10
1
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
0.1
500
I
D
,
100
μ
s
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
1ms
1000
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 29A
10
8
6
4
2
0
200
160
120
80
40
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
V
GS
= 6V
V
GS
= 8V
V
GS
= 10V
V
GS
= 12V
V
GS
= 14V
V
GS
= 6 VOLTS
12
14
DESCENDING ORDER
FSPYC264R, FSPYC264F
相關(guān)PDF資料
PDF描述
FSPYE230 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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FSPYE230F3 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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