參數(shù)資料
型號: FSPYE234R
廠商: Intersil Corporation
英文描述: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管)
中文描述: 抗輻射,抗SEGR N溝道功率MOSFET(抗輻射?溝道馬鞍山場效應(yīng)管)
文件頁數(shù): 8/8頁
文件大?。?/td> 79K
代理商: FSPYE234R
8
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil Ltd.
8F-2, 96, Sec. 1, Chien-kuo North,
Taipei, Taiwan 104
Republic of China
TEL: 886-2-2515-8508
FAX: 886-2-2515-8369
FSPYE234R, FSPYE234F
SMD.5
3 PAD CERAMIC LEADLESS CHIP CARRIER
D
1
E
1
E
2
D
2
b
A
D
E
1 - GATE
2 - SOURCE
3 - DRAIN
1
2
3
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.112
0.124
2.84
3.15
3
b
0.090
0.100
2.28
2.54
-
D
0.291
0.301
7.39
7.64
-
D
1
D
2
E
0.281
0.291
7.13
7.39
-
0.070
0.080
1.78
2.03
-
0.395
0.405
10.03
10.28
-
E
1
E
2
0.220
0.230
5.58
5.84
-
0.115
0.125
2.92
3.17
-
NOTES:
1. No current JEDEC outline for this package.
2. Controlling dimension: Inch.
3. Measurement prior to pre-solder coating the mounting pads.
4. Revision 4dated 5-00.
相關(guān)PDF資料
PDF描述
FSPYE234D1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE234F Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE234F3 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE234F4 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE234R3 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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