參數(shù)資料
型號(hào): FSQ0765RQ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 穩(wěn)壓器
英文描述: 3.92 A SWITCHING CONTROLLER, 75.8 kHz SWITCHING FREQ-MAX, ZFM6
封裝: ROHS COMPLIANT, TO-220F, 6 PIN
文件頁數(shù): 4/19頁
文件大?。?/td> 3321K
代理商: FSQ0765RQ
F
S
Q0
765RQ
Green
-Mode
Farich
ild
P
o
we
rSw
itch
(FPS)
for
Quasi
-Resonant
Operatio
n
2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1
12
Functional Description
1. Startup: At startup, an internal high-voltage current
source supplies the internal bias and charges the
external capacitor (Ca) connected to the VCC pin, as
illustrated in Figure 22. When VCC reaches 12V, the
FPS begins switching and the internal high-voltage
current source is disabled. The FPS continues its normal
switching operation and the power is supplied from the
auxiliary transformer winding unless VCC goes below the
stop voltage of 8V.
Figure 22. Startup Circuit
2. Feedback Control: FPS employs current-mode
control, as shown in Figure 23. An opto-coupler (such as
the FOD817A) and shunt regulator (such as the KA431)
are typically used to implement the feedback network.
Comparing the feedback voltage with the voltage across
the Rsense resistor makes it possible to control the
switching duty cycle. When the reference pin voltage of
the shunt regulator exceeds the internal reference
voltage of 2.5V, the opto-coupler LED current increases,
pulling down the feedback voltage and reducing the duty
cycle. This typically happens when the input voltage is
increased or the output load is decreased.
2.1 Pulse-by-Pulse Current Limit: Because current-
mode control is employed, the peak current through the
SenseFET is limited by the inverting input of PWM
comparator (VFB*), as shown in Figure 23. Assuming
that the 0.9mA current source flows only through the
internal resistor (3R + R = 2.8k), the cathode voltage of
diode D2 is about 2.5V. Since D1 is blocked when the
feedback voltage (VFB) exceeds 2.5V, the maximum
voltage of the cathode of D2 is clamped at this voltage,
clamping VFB*. Therefore, the peak value of the current
through the SenseFET is limited.
2.2 Leading-Edge Blanking (LEB): At the instant the
internal SenseFET is turned on, a high-current spike
usually occurs through the SenseFET, caused by
primary-side capacitance and secondary-side rectifier
reverse recovery. Excessive voltage across the Rsense
resistor would lead to incorrect feedback operation in the
current-mode PWM control. To counter this effect, the
FPS employs a leading-edge blanking (LEB) circuit. This
circuit inhibits the PWM comparator for a short time
(tLEB) after the SenseFET is turned on.
Figure 23. Pulse-Width-Modulation (PWM) Circuit
3. Synchronization: The FSQ-series employs a quasi-
resonant switching technique to minimize the switching
noise and loss. The basic waveforms of the quasi-
resonant converter are shown in Figure 24. To minimize
the MOSFET's switching loss, the MOSFET should be
turned on when the drain voltage reaches its minimum
value, which is indirectly detected by monitoring the VCC
winding voltage, as shown in Figure 24.
Figure 24. Quasi-Resonant Switching Waveforms
8V/12V
V
ref
Internal
Bias
V
CC
V
str
I
CH
V
CC good
V
DC
C
a
FSQ0765R Rev.00
3
6
4
OSC
V
CC
V
ref
I
delay
I
FB
V
SD
R
3R
Gate
driver
OLP
D1
D2
+
V
FB*
-
V
FB
KA431
C
B
V
O
FOD817A
R
sense
SenseFET
FSQ0765R Rev. 00
V
DC
V
RO
V
RO
V
ds
t
F
1.2V
V
sync
230ns Delay
1.0V
ON
V
ovp (8V)
FSQ0765R Rev.00
MOSFET Gate
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