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參數(shù)資料
| 型號： | FSS13A0R3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 12 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 71K |
| 代理商： | FSS13A0R3 |
1
TM
File Number
4487.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation.
Copyright
Intersil Corporation 2000
FSS13A0D, FSS13A0R
2A, 100V, 0.170 Ohm, Rad Hard, SEGR
Resistant, N-Channel Power MOSFETs
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose
hardness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Formerly available as type TA17696.
Ordering Information
Features
12A, 100V, r
DS(ON)
= 0.170
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 1.5nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Symbol
Packaging
TO-257AA
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Commercial
FSS13A0D1
10K
TXV
FSS13A0D3
100K
Commercial
FSS13A0R1
100K
TXV
FSS13A0R3
100K
Space
FSS13A0R4
D
G
S
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
G
SD
Data Sheet
June 2000
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FSS13A0R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
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| FSS145-TL-E | 制造商:SANYO 功能描述:Pch 45V 8A 0.024 rnoW Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 45V 8A SOT96 制造商:Sanyo 功能描述:0 |
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