參數(shù)資料
型號: FST3384A
文件頁數(shù): 10/178頁
文件大?。?/td> 3973K
代理商: FST3384A
July 1998
FSB619
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
°C
-55 to +150
Operating and Storage Junction Temperature Range
T
J,
T
stg
A
2
Collector Current - Continuous
I
C
V
5
Emitter-Base Voltage
V
EBO
V
50
Collector-Base Voltage
V
CBO
V
50
Collector-Emitter Voltage
V
CEO
Units
FSB619
Parameter
Symbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T
A = 25°C unless otherwise noted
°C/W
250
Thermal Resistance, Junction to Ambient
R
θ
JA
mW
mW/°C
500
4
Total Device Dissipation*
Derate above 25°C
P
D
FSB619
Units
Max
Characteristic
Symbol
Page 1 of 2
F
Discrete Power & Signal
Technologies
1998 Fairchild Semiconductor Corporation
SuperSOT
TM
-3 (SOT-23)
C
E
B
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