參數(shù)資料
型號： FSYA150R
廠商： Intersil Corporation
英文描述： Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
中文描述： 抗輻射，抗SEGR N溝道功率MOSFET
文件頁數(shù)： 4/8頁
文件大小： 57K
代理商： FSYA150R
4-4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
40
30
10
50
100
10
11
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
500
T
C
= 25
o
C
100
μ
s
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
300
10ms
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms,V
GS
= 12V, I
D
= 25A
10
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
T
θ
J
)
0.001
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
SINGLE PULSE
P
DM
t
1
t
2
0.01
0.02
0.05
0.1
0.2
0.5
FSYA150D, FSYA150R
相關PDF資料
PDF描述
FSYA150R1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYA150R3 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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FSYA250D 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
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相關代理商/技術參數(shù)
參數(shù)描述
FSYA150R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYA150R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYA150R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYA250D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSYA250D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
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