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參數(shù)資料
| 型號(hào)： | FSYA250R4 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 27 A, 200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, LCC-3 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 46K |
| 代理商： | FSYA250R4 |
3-128
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
20
30
10
100
10
1
1
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
600
100
μ
s
10ms
100ms
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
HEAT SINK REQUIRED
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 17A
N
T
θ
J
)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1
0.001
0.01
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
FSYA250D, FSYA250R
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| FSYA254R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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