參數(shù)資料
型號: FSYA450D1
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
中文描述: 11 A, 500 V, 1.02 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 5/8頁
文件大?。?/td> 56K
代理商: FSYA450D1
4-5
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
100
10
1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
0.1
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
IF R
0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSYA450D, FSYA450R
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