參數(shù)資料
型號(hào)： FSYA450D3
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
中文描述： 11 A, 500 V, 0.53 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CERAMIC, LCC-3
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 56K
代理商： FSYA450D3
4-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSYA450D, FSYA450R
500
500
UNITS
V
V
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
11
7
33
±
20
A
A
A
V
150
60
1.20
33
11
33
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
PARAMETER
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
MIN
500
-
1.5
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.440
-
-
-
-
-
-
110
-
22
54
7
3050
400
80
-
MAX
-
5.0
4.0
-
25
250
100
200
6.12
0.530
1.02
40
20
85
15
200
130
7.9
26
62
-
-
-
-
0.83
UNITS
V
V
V
V
μ
A
μ
A
nA
nA
V
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 400V,
V
GS
= 0V
V
GS
=
±
20V
Gate to Source Leakage Current
I
GSS
Drain to Source On-State Voltage
Drain to Source On Resistance
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 11A
I
D
= 7A,
V
GS
= 12V
T
C
= 25
o
C
T
C
= 125
o
C
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DD
= 250V, I
D
= 11A,
R
L
= 22.7
, V
GS
= 12V,
R
GS
= 2.35
V
GS
= 0V to 20V
V
GS
= 0V to 12V
V
GS
= 0V to 2V
V
DD
= 250V,
I
D
= 11A
I
D
= 11A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Source to Drain Diode Specifications
PARAMETER
SYMBOL
V
SD
t
rr
TEST CONDITIONS
MIN
0.6
-
TYP
-
-
MAX
1.8
980
UNITS
V
ns
Forward Voltage
Reverse Recovery Time
I
SD
= 11A
I
SD
= 11A, dI
SD
/dt = 100A/
μ
s
FSYA450D, FSYA450R
相關(guān)PDF資料
PDF描述
FSYA450R1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYA450R3 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYA450R4 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYA9150D Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYA9150D1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSYA450R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYA450R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYA450R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYA9150D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYA9150D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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