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4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
20
40
30
10
100
90
80
70
60
50
0
500
100
10
1
0.1
1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1ms
100
μ
s
10ms
T
C
= 25
o
C
500
CHARGE
V
G
12V
Q
G
Q
GS
Q
GD
2.5
2.0
1.5
1.0
0.5
0.080
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 56A
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
T
θ
J
)
0.001
0.01
0.1
N
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
qJC
+ T
C
SINGLE PULSE
0.01
0.02
0.2
0.1
0.05
0.5
10
t, RECTANGULAR PULSE DURATION (s)
FSYC055D, FSYC055R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSYC160D | Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSYC160D1 | Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSYC160D3 | Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSYC160R | Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSYC160R1 | Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSYC160D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSYC160D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSYC160D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSYC160R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| FSYC160R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
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