參數(shù)資料
型號： FSYC160D1
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
中文描述： 70 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CERAMIC, SMD-2, LCC-3
文件頁數(shù)： 2/8頁
文件大?。?/td> 49K
代理商： FSYC160D1
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSYC160D, FSYC160R
100
100
UNITS
V
V
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Derated Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I
AS
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
SM
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
70
46
200
±
20
A
A
A
V
208
83
1.67
200
70
200
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
100
-
-
V
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
5.0
V
1.5
-
4.0
V
0.5
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80V,
V
GS
= 0V
-
-
25
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 70A
I
D
= 46A,
V
GS
= 12V
-
-
1.62
V
Drain to Source On Resistance
T
C
= 25
o
C
T
C
= 125
o
C
-
0.017
0.022
-
-
0.034
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DD
= 50V, I
D
= 70A,
R
L
= 0.70
, V
GS
= 12V,
R
GS
= 2.35
-
-
50
ns
Rise Time
-
-
200
ns
Turn-Off Delay Time
-
-
95
ns
Fall Time
-
-
50
ns
Total Gate Charge
V
GS
= 0V to 20V
V
GS
= 0V to 12V
V
GS
= 0V to 2V
V
DD
= 50V,
I
D
= 70A
-
-
370
nC
Gate Charge at 12V
-
200
230
nC
Threshold Gate Charge
-
-
15
nC
Gate Charge Source
-
38
58
nC
Gate Charge Drain
-
102
120
nC
Plateau Voltage
I
D
= 70A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
8
-
V
Input Capacitance
-
4400
-
pF
Output Capacitance
-
1500
-
pF
Reverse Transfer Capacitance
-
585
-
pF
Thermal Resistance Junction to Case
-
-
0.6
o
C/W
FSYC160D, FSYC160R
相關(guān)PDF資料
PDF描述
FSYC160D3 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
FSYC160R1 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
FSYC160R3 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
FSYC160R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSYC160D3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
FSYC160R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
FSYC160R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
FSYC160R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
FSYC160R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
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