型號: | FSYC163R1 |
廠商: | INTERSIL CORP |
元件分類: | JFETs |
英文描述: | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
中文描述: | 62 A, 130 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
封裝: | CERAMIC, LCC-3 |
文件頁數(shù): | 7/8頁 |
文件大?。?/td> | 61K |
代理商: | FSYC163R1 |
相關(guān)PDF資料 |
PDF描述 |
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FSYC163R3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
FSYC163R4 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
FSYC163D1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
FSYC163D3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
FSYC260D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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FSYC163R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
FSYC163R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
FSYC260D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
FSYC260D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
FSYC260D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |