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參數資料
| 型號： | FSYC360D1 |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET |
| 文件頁數： | 2/8頁 |
| 文件大小： | 77K |
| 代理商： | FSYC360D1 |
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSYC360D, FSYC360R
400
400
UNITS
V
V
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
21
13
63
±
20
A
A
A
V
208
83
1.67
63
21
63
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 1mA, V
GS
= 0V
400
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
5.0
V
1.5
-
4.0
V
0.5
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 320V,
V
GS
= 0V
-
-
25
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
V
GS
= 12V, I
D
= 21A
-
-
4.85
V
Drain to Source On Resistance
r
DS(ON)12
I
D
= 13A,
V
GS
= 12V
T
C
= 25
o
C
T
C
= 125
o
C
-
0.190
0.210
-
-
0.410
Turn-On Delay Time
t
d(ON)
V
DD
= 200V, I
D
= 21A,
R
L
= 9.5
, V
GS
= 12V,
R
GS
= 2.35
-
-
45
ns
Rise Time
t
r
-
-
45
ns
Turn-Off Delay Time
t
d(OFF)
-
-
120
ns
Fall Time
t
f
-
-
25
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 200V,
I
D
= 21A
-
-
280
nC
Gate Charge at 12V
Q
g(12)
V
GS
= 0V to 12V
-
160
180
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
-
9
nC
Gate Charge Source
Q
gs
-
26
30
nC
Gate Charge Drain
Q
gd
-
82
92
nC
Plateau Voltage
V
(PLATEAU)
I
D
= 21A, V
DS
= 15V
-
7
-
V
FSYC360D, FSYC360R
相關PDF資料 |
PDF描述 |
|---|---|
| FSYC360R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC360R3 | CONN MOD 5 POS FEMALE SMD |
| FSYC360R4 | CONN MOD 5 POS FEMALE SMD |
| FSYC9055D | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9055D1 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSYC360R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC360R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC360R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC9055D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9055D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
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