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參數(shù)資料
| 型號： | FSYC9055R4 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| 中文描述： | 59 A, 60 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | FSYC9055R4 |
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSYC9055D, FSYC9055R
-60
-60
UNITS
V
V
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . .I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
59
38
177
±
20
A
A
A
V
162
65
1.30
177
59
177
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
-60
-
-
V
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-7.0
V
-2.0
-
-6.0
V
-1.0
-
-
V
μ
A
μ
A
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -48V,
V
GS
= 0V
-
-
25
-
-
250
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
r
DS(ON)12
V
GS
= -12V, I
D
= 59A
I
D
= 38A,
V
GS
= -12V
-
-
-1.79
V
ns
Drain to Source On Resistance
T
C
= 25
o
C
T
C
= 125
o
C
-
0.017
0.027
-
-
0.043
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DD
= -30V, I
D
= 59A,
R
L
= 0.51
, V
GS
= -12V,
R
GS
= 2.35
-
-
55
Rise Time
-
-
35
ns
Turn-Off Delay Time
-
-
85
ns
Fall Time
-
-
35
ns
Total Gate Charge
V
GS
= 0V to -20V
V
GS
= 0V to -12V
V
GS
= 0V to -2V
V
DD
= -30V,
I
D
= 59A
-
-
280
nC
Gate Charge at 12V
-
140
160
nC
Threshold Gate Charge
-
-
17
nC
Gate Charge Source
-
38
49
nC
Gate Charge Drain
-
26
38
nC
Plateau Voltage
I
D
= 59A, V
DS
= -15V
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
-
-6
-
V
Input Capacitance
-
6100
-
pF
Output Capacitance
-
2200
-
pF
Reverse Transfer Capacitance
-
300
-
pF
Thermal Resistance Junction to Case
-
-
0.77
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
I
SD
= 59A
I
SD
= 59A, dI
SD
/dt = 100A/
μ
s
-0.6
-
-1.8
V
Reverse Recovery Time
-
-
120
ns
FSYC9055D, FSYC9055R
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| FSYC9160R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
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