參數資料
型號: FSYC9160D
廠商: Intersil Corporation
英文描述: Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
中文描述: 輻射,SEGR硬化抗P通道功率MOSFET
文件頁數: 5/8頁
文件大?。?/td> 61K
代理商: FSYC9160D
5
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
300
100
10
1
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
10
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
IF R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R = 0
t
P
V
GS
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
I
AS
t
AV
t
P
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
= -12V
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
V
GS
t
ON
PULSE WIDTH
FSYC9160D, FSYC9160R
相關PDF資料
PDF描述
FSYC9160R1 RES NET BUSSED 680 OHM 16-SMD
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FSYC9160R4 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160D1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160D3 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
相關代理商/技術參數
參數描述
FSYC9160D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160D3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs