型號: | FSYC9160D |
廠商: | Intersil Corporation |
英文描述: | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
中文描述: | 輻射,SEGR硬化抗P通道功率MOSFET |
文件頁數: | 5/8頁 |
文件大?。?/td> | 61K |
代理商: | FSYC9160D |
相關PDF資料 |
PDF描述 |
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FSYC9160R1 | RES NET BUSSED 680 OHM 16-SMD |
FSYC9160R3 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
FSYC9160R4 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
FSYC9160D1 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
FSYC9160D3 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
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FSYC9160D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
FSYC9160D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
FSYC9160R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
FSYC9160R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
FSYC9160R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |