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參數(shù)資料
| 型號(hào)： | FT0811MI00TR |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 8 A, TRIAC, TO-251AA |
| 封裝： | PLASTIC, IPAK-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 172K |
| 代理商： | FT0811MI00TR |
P
PART NUMBER INFORMA
ART NUMBER INFORMATION
TION
FT08...I
(1) Minimum IGT is guaranted at 5% of IGT max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
HIGH COMMUTATION TRIAC
Electrical Characteristics
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
IGT (1)
Gate Trigger Current
VD = 12 VDC , RL = 33
W, Tj = 25 C Q1÷Q3 MAX
VTM (2)
On-state Voltage
IT = 11 Amp, tp = 380 s, Tj = 25 C
MAX
1.6
V
VGT
Gate Trigger Voltage
VD = 12 VDC , RL = 33
W, Tj = 25 C Q1÷Q3 MAX
VGD
Gate Non Trigger Voltage
VD = VDRM , RL = 3.3K
W, Tj = 125 C Q1÷Q3 MIN
IL
Latching Current
IG = 1.2 IGT, Tj = 25 C
Q1, Q3 MAX
40
50
70
mA
dV/dt (2)
Critical Rate of Voltage Rise VD = 0.67 x VDRM
, Gate open
MIN
200 500 1000 V/s
Rth(j-a)
Quadrant
C/W
11
Rth(j-c)
Thermal Resistance
for AC 360 conduction angle
(dv/dt)c= 10 V/s
Tj = 125 C
MIN
without snubber
Tj = 125 C
MIN
Tj = 125 C
IH (2)
Holding Current
IT = 100 mA , Gate open, Tj = 25 C
MAX
Q2
MAX
50
60
80
(dI/dt)c (2) Critical Rate of Current Rise (dv/dt)c= 0.1 V/s
Tj = 125 C
MIN
Vt(o) (2)
Threshold Voltage
Tj = 125 C
MAX
0.85
V
rd (2)
Dynamic Resistance
Tj = 125 C
MAX
IDRM/IRRM
Off-State Leakage Current VD = VDRM ,
Tj = 125 C
MAX
1
mA
VR = VRRM ,
Tj = 25 C
MAX
5
A
Junction-Case
100
16
25
50
1.3
mA
0.2
25
50
V
A/ms
-
4.0
7
m
W
90
C/W
1.8
14
35
mA
-
4.5
FAGOR
TRIAC
CURRENT
CASE
VOLTAGE
SENSITIVITY
F T
08
11 B
I 00
FORMING
TR
PACKAGING
Nov - 05
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