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參數(shù)資料
| 型號： | FTM3725 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Transistor |
| 中文描述： | 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, MS-012AC |
| 封裝： | SOIC-16 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 71K |
| 代理商： | FTM3725 |
2004 Fairchild Semiconductor Corporation
Rev. B, June 2004
F
Absolute Maximum Ratings*
T
a
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Parameter
Value
40
60
6.0
1.2
- 55 ~ 150
Units
V
V
V
A
°
C
- Continuous
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
Parameter
Test Condition
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage *
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
C
= 10mA, I
B
= 0
I
C
= 10
μ
A, V
BE
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 50V, I
E
= 0
V
CB
= 50V, I
E
= 0, T
a
= 100
°
C
40
60
60
6.0
V
V
V
V
nA
μ
A
100
10
On Characteristics *
h
FE
DC Current Gain
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V, T
a
= 55
°
C
I
C
= 300mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 1.0V, T
a
= 55
°
C
I
C
= 800mA, V
CE
= 2.0V
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 100mA, I
B
= 10mA
I
C
= 300mA, I
B
= 30mA
I
C
= 500mA, I
B
= 50mA
I
C
= 800mA, I
B
= 80mA
I
C
= 1.0mA, I
B
= 100mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 100mA, I
B
= 10mA
I
C
= 300mA, I
B
= 30mA
I
C
= 500mA, I
B
= 50mA
I
C
= 800mA, I
B
= 80mA
I
C
= 1.0mA, I
B
= 100mA
30
60
30
40
35
20
20
25
180
V
CE
(sat)
Collector-Emitter Saturation Voltage
0.25
0.26
0.4
0.52
0.8
0.95
0.76
0.86
1.1
1.2
1.5
1.7
V
V
V
V
V
V
V
V
V
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
FTM3725
NPN Transistor
This device is designed for high current, low impedance line driver
applications.
Sourced from process 26.
C1C1C2C2C3C4C4C4
Mark: FTM3725
E1B1E2B2E3B4E4B4
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|---|---|
| FTM3725_Q | 功能描述:兩極晶體管 - BJT NPN/ 60V/ 500mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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